Find Verified Silicon Wafer Suppliers, Manufacturers and Wholesalers

SILICON WAFERS are the building blocks of modern technology, they provide the substrate onto which circuits are constructed. We offer Prime, Test, Monitor, SEMI standard, and customized silicon wafers in all diameters from 2�¢?�³ to 300mm. Our Wafers meet the SEMI standards, along with customized options.

Silicon On Insulator (SOI) Wafers: Chips fabricated on SOI wafers achieve 30% faster speeds and 80% lower power demands compared to CMOS devices. The SOI structure consists of three layers: a top active device layer for transistor fabrication, a buried oxide (BOX) insulator layer, and a bottom handle wafer layer.
Silicon Float Zone Wafers: is a crystal growth technique that produces highly pure silicon wafers with fewer impurities than traditional methods.
Silicon Thermal Oxide Wafers: Has high quality silicon thermal oxide wafers in all diameters from 2�¢?�³ to 300mm.
Silicon Nitride Wafers: Has different option of film processing for your silicon needs, including LPCVD nitride.
On Insulator (SOI): Has high quality silicon thermal oxide wafers in all diameters from 2�¢?�³ to 300mm.
Fused Silica Wafers: is the amorphous phase of quartz (SiO2).
Borofloat 33 Glass Wafers: is used in a wide range of applications like micro-optics, sensors, microlithography, semiconductor engineering, lighting, medical technology.

Silicon wafer reclaim services

GERMANIUM(Ge) WAFERS are semiconductor materials made from Germanium, a group IV element with properties that make it useful in various electronic applications. Historically, Germanium was one of the first materials used in transistors and is still utilized in some specialized applications today, particularly in high-speed electronics and photonics due to its favorable electronic and optical properties.

We offer the following Germanium Wafers:
Undoped Germanium Wafers: Pure Germanium with no intentional doping. These wafers are often used in experimental and research settings to investigate intrinsic semiconductor properties.
N-type Germanium Wafers: Doped with donor impurities (such as phosphorus or arsenic) to increase the concentration of electrons. These wafers are commonly used in transistor applications and other electronic circuits.
P-type Germanium Wafers: Doped with acceptor impurities (such as boron or gallium) to create electronic holes. P-type wafers are often used in diode and transistor applications.
High Purity Germanium Wafers: Extremely low levels of impurities, often used in specialized applications such as radiation detectors and other high-performance devices.
Germanium-on-Insulator (GOI) Wafers: A structure where a thin layer of germanium is bonded to an insulating substrate. This is used to improve device performance and reduce parasitic capacitance.
Thin-Film Germanium Wafers: Thin layers of Germanium material that are used in advanced applications such as flexible electronics and integrated circuits.

The daily production of silicon metal is 50t. The standards of silicon metal
are different from country to country, such as ASTMA922 in the United States;
JISG2312 in Japan; DIN17560 in Germany; 2169 in Russia and
GB2881 in China. Our products are also known as 441 and 553.

Sapphire wafers
These are thin slices of synthetic sapphire, commonly used as a substrate in a variety of high-tech applications. Sapphire, which is a crystalline form of aluminum oxide (Al�¢??O�¢??), is valued for its hardness, optical transparency, thermal stability, and chemical resistance. Here�¢??s a brief overview of their applications and properties:

Properties of Sapphire Wafers:

Hardness: Second only to diamond, sapphire is extremely scratch-resistant.
Optical Clarity: Transparent across a wide range of wavelengths (UV to infrared), making it ideal for optical components.
Thermal Stability: Can withstand high temperatures, which is useful in semiconductor processes.
Chemical Resistance: Highly resistant to acids and alkalis, ensuring durability in harsh environments.
Electrical Insulation: Sapphire is an excellent electrical insulator.

INDIUM PHOSPHIDE (InP) WAFERS are semiconductor materials made of indium phosphide, a compound semiconductor that is widely used in high-frequency and optoelectronic applications. Due to its efficient electron mobility and direct bandgap properties, InP is favored for devices such as:

High-speed electronics
Laser diodes
Photodetectors
Telecommunications applications, including optical fiber communication
We offer the following InP Wafers:
Undoped InP Wafers: These are pure InP with no intentional doping, used in various applications where intrinsic properties are required.
N-type InP Wafers: Doped with donor impurities (such as tellurium) to increase electron concentration, useful in transistors and high-speed electronics.
P-type InP Wafers: Doped with acceptor impurities (such as zinc) to create holes in the semiconductor, used in light-emitting devices and other optoelectronics.
InP Substrates: Used as a base for growing other semiconductor materials in heterostructures for various applications.
InP Membrane Wafers: Thin layers of InP used for specific applications, including applications in flexible electronics and advanced photonic devices.
InP-based Quantum Dot Wafers: Engineered to create quantum dots that can be used in photonic and optoelectronic devices for enhanced performance.

GaAs Wafers
Gallium Arsenide (GaAs) wafers are critical components in modern electronics and photonics due to their superior electrical and optical properties.

Here�¢??s a focused overview:

GaAs�¢?? is shorthand for Gallium Arsenide, a compound made up of two elements, and the semiconductor used to manufacture GaAs wafers. GaAs is used as a direct bandgap semiconductor, which in layman�¢??s terms, simply means that particles such as electrons can pass through components much quicker and with very little interference. This makes them particularly useful in optical devices because photons, the basic unit for all light, can pass through lenses with ease.

What are GaAs Wafers Use For?

The use of GaAs wafers is dictated by the capabilities of the compound. Because GaAs is a direct bandgap semiconductor, it is especially useful in sensitive electronic equipment that requires amplifying low frequencies. Some of the most common applications for GaAs wafers include:

Radars

Radio communication equipment

Tachometers

Satellites

Microwave

LEDs

Silicon metal #3303 Si:99.0%min. Fe:0.3%max. Al:0.3%max. Ca:0.03%max. Size:10-100mm,90%min. In plastic woven bags of 1 mt each.

Ferro silicon, ferro silicon powder, ferro silicon briquette.

Silicon Metal 441