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Si3N4 Ceramic Substrate Manufacturer,Silicon Nitride Ceramic For IGBT,Power Module Substrates,LED Substrate
Product Description

Silicon Nitrides (Si3N4) Feature An Excellent Combination Of Material Properties. They Are Nearly As Light As Silicon Carbide (SiC), But Their Microstructure Gives Them Excellent Thermal Shock Resistance And Their High Fracture Toughness Makes Them Resistant To Impacts And Shocks.

Properties Of Silicon Nitride (Si3N4)
Very Low Density (3.21 G/Cm3)
Very High Fracture Toughness (7 MPam1/2)
Good Flexural Strength (850 MPa)
Very Good Thermal Shock Resistance: High Thermal Stress Parameters (569 K)
Maximum Operating Temperature In An Oxidizing Atmosphere: 1,300°C
Maximum Operating Temperature In A Neutral Atmosphere: 1,600°C
Feature
High Strength (High Reliability)
Similar To The Thermal Expansion Coefficient Of Semiconductors Such As Si, SiC, And GaN
High Dielectric Strength
High Bending Strength
Main Use Of Precision Ceramics For Electronics (Si3N4=Silicon Nitride)
Power Module Substrates
LED Substrates
Submount For Optical Pick-Up
Heat Dissipation Substrates
The porous silicon nitride ceramic material combines the excellent properties of both the silicon nitride ceramic and the porous ceramic and is a ceramic material having a communicating or closed pore in the body. Porous silicon nitride ceramics have been widely used in aerospace and environmental chemicals due to their special structure and properties, such as low density, high porosity, moderate dielectric properties, high specific surface area, high hardness, and high fracture toughness. Important fields such as biomedicine, national defense, and military.