Huarui Electronic Co. Ltd

The 808nm series high power laser diodes with optimized QW structure made by htoe have a high reliability, high performance. It has several structures of emitter width. The 808nm series high power laser diodes can get 300mW 500mW 1.0W 2.0W 3.0W and 5.0W at RT and CW condition. These products can be applied to solid-state laser pumping sources, medical usage, target designation, and free space optical communication applications.

3W 808nm+/-10nm High Power Laser Diode !We have 2 kinds of mounting method, the C-Mount and TO3.
Bidders please contact us to confirm mount type before shipment!
If you don't have to contact us, we will first express TO3 for you!

Outline drawings as following:
Applications:
1)Solid-state Laser Pumping
2)Medical Usage
3)Target Designator
4)Free-space Optical Communication
Warranty:
1) 30 days warranty from the date of delivery for manufacturer's defact only.
2) Damage caused by dust or operation mistaked can not be warranted.
3) We accept return & refund within 10 days after delivery for quality problem.
4) Buyer pays the return freight in case of return.

Buyer Notice:
1) Buyers must be 18 years old and must have enough experience of using high power laser diodes.
2) Improper operation may cause damage to the laser diodes, especially for the over current operation. Seller doesn't take responsibility for these damage or loss.



Shipping:
1) The handling time is around 3 workdays.
2) The shipping will be via Express Service within around 7 workdays globally.

Conductively Cooled Package (CCP Package) high power laser diode bars (laser diode arrays) are widely used for solid-state pumping (DPSS laser), infrared lighting, medical & aesthetic treatment and laboratory research. NDL provides both CW and QCW (Quasi-CW) laser diode bars.

Features:
20W~60W CW and 100W~300W QCW laser diode bars available.
795nm, 808nm, 940nm, 976nm (+/-3nm, +/-5nm, +/-10nm) available
CS-Mount, Narrow CS-Mount, W2 Package available
TM & TE Polarization Available
Long life time > 10,000 Hours
Support custom package design
Optical Output Power (CW): 20W, 30W, 40W, 50W, 60W
Optical Output Power (QCW): 100W, 150W, 200W, 300W
Mounting Package: CS-Mount, Narrow CS-Mount, W2 Package or custom heatsink
Wavelength Available: 795nm, 808nm, 940nm, 976nm
Wavelength Tolerance: +/-3nm, +/-5nm, +/-10nm
Fast Axis Collimation: Optional
Expected Life Time: >10,000 Hours.

INDIUM PHOSPHIDE (InP) WAFERS are semiconductor materials made of indium phosphide, a compound semiconductor that is widely used in high-frequency and optoelectronic applications. Due to its efficient electron mobility and direct bandgap properties, InP is favored for devices such as:

High-speed electronics
Laser diodes
Photodetectors
Telecommunications applications, including optical fiber communication
We offer the following InP Wafers:
Undoped InP Wafers: These are pure InP with no intentional doping, used in various applications where intrinsic properties are required.
N-type InP Wafers: Doped with donor impurities (such as tellurium) to increase electron concentration, useful in transistors and high-speed electronics.
P-type InP Wafers: Doped with acceptor impurities (such as zinc) to create holes in the semiconductor, used in light-emitting devices and other optoelectronics.
InP Substrates: Used as a base for growing other semiconductor materials in heterostructures for various applications.
InP Membrane Wafers: Thin layers of InP used for specific applications, including applications in flexible electronics and advanced photonic devices.
InP-based Quantum Dot Wafers: Engineered to create quantum dots that can be used in photonic and optoelectronic devices for enhanced performance.

B0520lw-7-f Sod123 3, 000 Diodes
1.5ke27a-t Do201 40 Diodes
Zvn2120gta Sot223 30, 000 Diodes
Pam8603mnhr Ssop-24 5, 000 Diodes
Pam8403dr-h Sop-16 15, 000 Diodes
Bav21ws-7-g Sod323 3, 000 Diodes


T0-252

0.2-0.5 Ampere / DO-41 / DO-15
TYPE I(AV) VRRM IFSM VFM I RM @ Case
@IRM VFM I(AV) VRRM TA=25
A V A V A A
R1200 0.5 1200 30 2.0 0.5 5.0 DO-41
R1500 0.5 1500 30 2.0 0.5 5.0 -DO-41
R1800 0.5 1800 30 2.0 0.5 5.0 DO-41
R2000 0.2 2000 30 2.0 0.2 5.0 DO-41
R2500 0.2 2500 30 3.0 0.2 5.0 DO-15
R3000 0.2 3000 30 4.0 0.2 5.0 DO-15
R4000 0.2 4000 30 5.0 0.2 5.0 DO-15
R5000 0.2 5000 30 5.0 0.2 5.0 DO-15.


Cartons packings.

TYPE I VRRM IFSM VFM IRM@VRRM trr Case
@IRM VFM I(AV) TA=25
A V A V A A ns
DHE1A 1.0 50 25 1.0 1.0 5.0 50 SOD-123FL
DHE1B 1.0 100 25 1.0 1.0 5.0 50 SOD-123FL
DHE1D 1.0 200 25 1.0 1.0 5.0 50 SOD-123FL
DHE1F 1.0 300 25 1.3 1.0 5.0 50 SOD-123FL
DHE1G 1.0 400 25 1.3 1.0 5.0 50 SOD-123FL
DHE1J 1.0 600 25 1.7 1.0 5.0 75 SOD-123FL.


Cartons packings.

A&s semiconductor co., ltd can supply many kinds of diodes:
Point contact diode
Battery charger diode
Voltage reference diode
Power zener diode
Electronic diode
Light diode
Flyback diode
Backward diode
Reverse bias diode
Trapatt diode
High current diode
High voltage diode
High power diode
High frequency diode
High speed diode
Gunn diode
Power diode
Power schottky diode
Resonant tunneling diode

PN: HSD7100X0400
Brand: HONSSEMI
Specification:
IFAVM=7100A @ Half sine wave, Tc = 85 ¡ãC
VRRM=400V @ Half sine wave, tP = 10 ms, f = 50 Hz
VRSM:450V
VF0=0.74 V @Tj = 170 ¡ãC
rF = 0.026 
IFRMS =11200 A @ Half sine wave, Tc = 85 ¡ãC
IFSM=55000 A
IRRM£º 50 mA @ Tj = 170 ¡ãC VR = VRRM.

Electrical Characteristic:
Optimized for high current rectifiers
Very low on-state voltage
Very low thermal resistance.

Application: Welding Machines.