Silicon carbide(sic) wafer
Description:
A wide energy bandgap, high thermal conductivity, high saturated electron drift velocities, and high break-down electric field make silicon carbide(sic) a candidate of choice for high-temperature, high-speed, high frequency, and high-power applications. Sic based devices are highly expected for the spaceraft, space probe, oil exploration, optical storage, display, and power management and distributions
Application:
Luminescence of solid
Microwave communication
Fiber-optic communication
Navigation
Individual vacuum package
