Description
RD30HVF1 is a mos fet type transistor specifically
Designed for vhf rf power amplifiers applications.
Features
High power gain:
Pout>30W, GP>14.7DB @VDD=12.5V, F=175MHZ
High efficiency: 60%typ.
Application
For output stage of high power amplifiers in vhf band
Mobile radio sets.
Rohs compliant
Rd30hvf1-101 is a rohs compliant products.
Rohs compliance is indicate by the letter after
The lot marking.
Tray.
Please ask detailed and specific
questions about Pricing, Minimum Order Quantity, Delivery Timelines etc. Detailed Messages
result in prompt responses.
