Selective etching is a process that removing required layer and no hurt to any other layer, usually the removed layer should be at the top side, but in some situation, we could also remove the inside layer
We could do any pattern quickly, no mask required and chemical polluation to the product, normally the min line width and pitch could be 20~30um, in some material we could achieve less than 10um
The layer thcikness could be 10nm~10um
And we recently succeed in doulbe side etching of different patterns
