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Global High Frequency Transformer

Supplier From China
Oct-23-13

1.Operating temperature range:-20 to +45
2.Storage temperature:-40 to 70
3.Switching frequency:1khz to 200khz
4.Withstanding voltage:1500/3750vac for 1 minute between primary and secondary
5.Insulation resistance:500vdc 100m¦¸ miin. Between primary&secondary.


As per customer's requirments


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Larege transmisson power, low loss, wide frequency range, stable performance, low temperature rise.
Used for electric apparatus, aerocraft, transmitter, computer .Communication equipment and tv etc.
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Features:
Wide voltage
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Color tv
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Certification:
Iso9001, ul, vde, ce, cb, cqc, iso14001
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Carton.
Mar-15-10
 
Characteristics:

Low remanence ratio
Low core losses
Low hysteresis telescopic
Low leakage induction
High saturation flux density
High permeability
High Curie temperature
Compact structure, high mechanical strength, easy installation.
May-29-13
 
Features:
Wide voltage
Frequency range,
Low power consumption
Low tempreture rise
High efficiency features.

Widely application:
Color tv
Lcd power supplies
Computers
Monitors
Switches
Other electrical equipment.

Certification:
Iso9001, ul, vde, ce, cb, cqc, iso14001
Feb-20-20
 
Send me blueprints or draws with dimensions information to quote

Size: Request customize
Aug-30-18
 
Taizhou bairui electronic technology co., ltd is professional in transformer fields, owns certifications of iso:9001:2008, ce and rohs , and commits to producing transformers with high quality and low cost.
Our transformer is famous at home and broad.We cooperate with many countries including russia, india and south korea.Manufacturing like amorphous transformer, inverse transformer, low frequency transformer, driving transformer and so on, whats more, we are a factory enterprise , can customize customers needs.
Looking forward to your inquiry and visiting.
GOLD Member
VERIFIED
Mar-08-25

Inp Wafers, WAFERS

$350 - $2.50K / Piece (CIF)
MOQ: 10  Pieces
Sample Available
Supplier From South Hackensack, New Jersey, United States
 
INDIUM PHOSPHIDE (InP) WAFERS are semiconductor materials made of indium phosphide, a compound semiconductor that is widely used in high-frequency and optoelectronic applications. Due to its efficient electron mobility and direct bandgap properties, InP is favored for devices such as:

High-speed electronics
Laser diodes
Photodetectors
Telecommunications applications, including optical fiber communication
We offer the following InP Wafers:
Undoped InP Wafers: These are pure InP with no intentional doping, used in various applications where intrinsic properties are required.
N-type InP Wafers: Doped with donor impurities (such as tellurium) to increase electron concentration, useful in transistors and high-speed electronics.
P-type InP Wafers: Doped with acceptor impurities (such as zinc) to create holes in the semiconductor, used in light-emitting devices and other optoelectronics.
InP Substrates: Used as a base for growing other semiconductor materials in heterostructures for various applications.
InP Membrane Wafers: Thin layers of InP used for specific applications, including applications in flexible electronics and advanced photonic devices.
InP-based Quantum Dot Wafers: Engineered to create quantum dots that can be used in photonic and optoelectronic devices for enhanced performance.
Oct-23-13
 
1.Operating temperature range:-20 to +45
2.Storage temperature:-40 to 70
3.Switching frequency:1khz to 200khz
4.Withstanding voltage:1500/3750vac for 1 minute between primary and secondary
5.Insulation resistance:500vdc 100m¦¸ miin. Between primary&secondary.


As per customer's requirment

Verification Status