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Shenzhen Asicon Telecom Co., Ltd.

Supplier From China
Dec-26-08
Supplier : Mobile signal booster, mobile signal repeater, mobile signal jammer,mobile repeater, mobile phone booster, dual band repeater, 4G LTE repeater, triple band repeater, quad band repeater, cellular repeater, RF jammer, RF repeater, cellular jammer

Services : OEM, ODM
Established: 2011 Standards: CE CERTIFICATION, ISO9001

Verification Status



Contact Details:
15G Jiafuge Caifu Building
Gangxia Futian District
Shenzhen 518048
Guangdong China


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Private Mold:
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Products Status:
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Style:
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Use:
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Interface Type:
blue tooth+Type C USB
Max Paper Size:
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Black Print Speed:
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Packaging & Delivery
Selling Units:
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Single package size:
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Single gross weight:
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Package Type:
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3. Support antenna isolation detection.
4. Automatic gain control.
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6. Auto shut off function available to avoid the damage and interference in unusual signal conditions.
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Power supply Ac:110~240v; dc: 6v/2a
Operating temperature -10¡æ~50¡æ
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The signalwing's j3f-a-20 is specially designed for small or medium sized indoor area, such residential, offices, inner large building or suburb low traffic location with poor connection. Elegant in it's design, it's one of the best cost effective solutions.

The j3f-a-20 mini repeater works sufficiently and reliably to optimize cell phone reception for any relevant system in gsm, cdma, wcdma or 4g lte. System status is clearly visible by led indicators. The light weight and compact size makes it ideal for easy installation. The coverage of j3f-a is ranging from 500~1500 square meters due to different
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6. Intelligent mode setting, automatically set the values.
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8. Easy installation & maintenance.
9. Extend cell phone battery life.

Power supply Ac:110~240v; dc: 9v/4a
Operating temperature -10¡æ~50¡æ
Environment conditions Ip30
Dimensions (d x w x h ) 186*122*65mm
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Inp Wafers, WAFERS

$350 - $2.50K / Piece (CIF)
MOQ: 10  Pieces
Sample Available
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INDIUM PHOSPHIDE (InP) WAFERS are semiconductor materials made of indium phosphide, a compound semiconductor that is widely used in high-frequency and optoelectronic applications. Due to its efficient electron mobility and direct bandgap properties, InP is favored for devices such as:

High-speed electronics
Laser diodes
Photodetectors
Telecommunications applications, including optical fiber communication
We offer the following InP Wafers:
Undoped InP Wafers: These are pure InP with no intentional doping, used in various applications where intrinsic properties are required.
N-type InP Wafers: Doped with donor impurities (such as tellurium) to increase electron concentration, useful in transistors and high-speed electronics.
P-type InP Wafers: Doped with acceptor impurities (such as zinc) to create holes in the semiconductor, used in light-emitting devices and other optoelectronics.
InP Substrates: Used as a base for growing other semiconductor materials in heterostructures for various applications.
InP Membrane Wafers: Thin layers of InP used for specific applications, including applications in flexible electronics and advanced photonic devices.
InP-based Quantum Dot Wafers: Engineered to create quantum dots that can be used in photonic and optoelectronic devices for enhanced performance.
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