SG01M-18S
Broadband SiC based UV photodiode A = 0.20 mm2

Properties of the SG01M-18S UV Photodiode
* Broadband UVA+UVB+UVC, PTB reported high chip stability
* Active Area A = 0.20 mm2
* TO18 hermetically sealed metal housing, short cap, 1 isolated pin and 1 case pin
* 10mW/cm2 peak radiation results a current of approx. 2600 nA

SG01M-18S UV Photodiode Specifications
Typical Responsivity at Peak Wavelength: 0.130/AW
Wavelength of max. Spectral Responsivity: 280nm
Responsivity Range: 221 - 358nm
Active Area: 0.20mm2
Dark Current (1V reverse bias): 0.7fA
Capacitance: 50pF
Short Circuit (10mW/cm2 at peak): 2600nA
Temperature Coefficient: < 0.1%/K
Operating Temperature: -55 ~ +170°C
Storage Temperature: -55 ~ +170°C
Soldering Temperature (3s): 260°C
Reverse Voltage: 20V