MF: Si Chemical Name: Silicon Nanowires Purity: > 99.9% Diameter: 40-50 nm Length: 80 Âµm Form Nanowires Product Number: CAS Number 7440-21-3
Size: 19*11cm Necklace size:25cm Weight:90g Infant baby kid washable silicone feeding bib 100% brand new and high quality Can be safely washed in the dishwasher or wiped clean Roll up bib for easy travel and storage Has a built in crumb catcher and adjustable clasp For use on babies 6 months and older All products have been tested for safety These silicone bibs do not contain lead, bpa, phthalates, latex, or pvc
Dummy grade silicon wafer. Diameter: 2-12 inch. Resistivity >1 ohm.Cm, surface condition: ssp, dsp or as-cut Dummy grade silicon wafer. Packing: coin roll or as customer request. ( like epack packing cassette) Usage: recycled solar material, machine testing, etc
Place of origin united states Brand name bondatek Bondatek provides ge, gaas, gap, gan, gasb, inp, inas, insb wafers to micro- electronics and optoelectronics industry in diameter range from 2" to 4" with orientation or , epd< 5000 cm-2 and epi ready surface. Inp based 25 piece/pieces
semiconductor si wafers prime grade/high quality diameter from 2" to 12" ultra thin or ultra thick crystalline orientation , , most resistivity range 1000 pack/packs / week
Now our products including 125*125 and 156*156, and all of them is high inner quality and surface quality Crystal structure Mono-crystalline Crystal method CZ Conductance Type P Dopant B dimension 125*125í+0.4 125*125í+0.4 156*156í+0.4 Diameter ª¦150í+0.4 ª¦165í+0.4 ª¦200í+0.4 Crystal orientation í+1 Resistivity( ª+.cm) 1-3/3-6 Lifetime( ª¦s) í¦15 Carbon concentration( atoms/cm3 ) í_5*1016 Oxygen concentration( atoms/cm3 ) í_0.95*1018. 300pcs/box.
High quality and good surface quality to meet the updating request of pv development and reduce the production cost. Crystal structuremono-crystalline Crystal method cz Conductance typep Dopant b Dimension125*125ía0.4156*156ía0.4 Diameter ª¦150ía0.4 ª¦165ía0.4ª¦200ía0.4 Crystal orientation ía1 Resistivity( ª+.Cm) 1-3/3-6 Lifetime( ª8s) í²15 Carbon concentration( atoms/cm3 )ín5*1016 Oxygen concentration( atoms/cm3 )ín0.95*1018 125*125 and 156*156
Multicrystalline silicon wafers 1.Material: multicrystalline silicon 2.Growth method: directional solidification 3.Conductivity type: p-type (boron doped), astm f42 4.Oxygen concentration: n 1, 0x1017 at./cm3, astm f 121 5.Carbon concentration: n 1x1018 at./cm3, astm f 121 * oxygen content measurement by astm 1188 and used calculation coefficient for ppm atomic is 4, 9 and and for at/cm3 is 2, 45e+17. 6.Square side: (156.0 0.5) mm 7.Symmetry as per the drawing in the enclosure no. 1 8.Thickness: (200 30) µm, astm f 533 9.Ttv: < 50 µm, astm f657 10.Bow < 50 µm, astm f 534 11.Surface saw damage depth µm < 20 (< 15 typically) 12.Saw traces µm 2 µs, astm f 28 15.Surface: as-cut and cleaned; visible contamination, oil or grease, finger prints, soap stains, slurry stains, epoxy/water stains, cracks are not allowed; edge chips under 1 mm from the edge of the wafer are allowed. . 16.Customer may request to receive reference samples 17.Wafers are being stacked into batches of 50-100 wafers each. Then it is sealed into polyethylene film. Protective paper among wafers is upon customer request. 500 -600 wafers in total are being packed into styrofoam box. Styrofoam boxes are being packed into pasteboard cases. Wafers are being packed in such a manner as to ensure minimal damage to the product during transportation. 18.All polystyrene boxes of wafers are identified with: box number; type of wafer; number of wafers per box; all contributing ingots numbers; thickness of wafers; date of packing / output inspection. Geometry: Square side angle:900, 5 Chamfer: 1, 5 mm0, 5mm at 452