UV Flame sensor is fire detect sensor which detecs ultraviolet rays of a flame instantly and output warning signal outside. By using emergency call equipment or adjusting the sensor connection, SKH-)$& can supervise multiple sensors at a long range.
1. Uv sensor guva-c22sd features Gallium nitride based material Schottky-type photodiode Photovoltaic mode operation Good visible blindness High responsivity & low dark current 2. Uv sensor guva-c22sd applications Uv index monitoring Uv-a lamp monitoring 3. Uv sensor guva-c22sd absolute maximum ratings Storage temperature: -40~90'c Operating temperature: -30~85'c Reverse voltage: 5v Forward current: 1ma Optical source power range: 0.1âµ~100m w/cm2 Soldering temperature: 260'c 4. Uv sensor guva-c22sd characteristics (at 25'c) Dark current: 1na max Temperature coefficient: 0.08%/'c Responsivity: 0.14a/w Spectral detection range: 240~370nm Active area: 0.076mm2
PCFS-IR2125A level sensor contact type, it is used for tube. The principle is infrared, output signal is analog. When there is no water, the sensor outputs low voltage value; When there is water, the sensor outputs a high voltage signal. The size can be customized. The photoelectric liquid level switch has high precision, low price, high reliability and wide application environment, it is less affected by strong acid, alkali and viscosity. Photoelectric level sensors can be used for higher liquid level accuracy requirements.
UV-A Sensor GUVA-C32SM GENERAL DESCRIPTION GUVA-C32SM supports integrated functions of ultraviolet light sensors such that can be easily configured and used in user applications. GUVA-C32SM comprises photodiodes, amplifiers, ADC, digital control logic and I2C interface circuit.GUVA-C32SM receives UVA and outputs digital count according to the intensity. Power consumption can be minimized by proper use of power management mode. FEATURES - UVA sensing with 16-bit resolution - Support UV index measurement (0 - 16) - Programmable gain and integration time - I2C slave interface up to 400KHz - Power management modes - Shutdown current : 0.8uA typical - Supply voltage of 2.2V to 3.6V - 2.0mm x 2.3mm x 1.4mm ,4-pin COBpackage APPLICATIONS Smartphone, Wearable devices, IoT, watch, weather station, bicycle navigation, gaming, accessary -
1.Features Gallium Nitride Based Material Schottky-type Photodiode Photovoltaic Mode Operation Good Visible Blindness High Responsivity & Low Dark Current 2.Applications UV Index Monitoring UV-A Lamp Monitoring 3. Absolute Maximum Ratings Storage Temperature: -40~90'C Operating Temperature: -30~85'C Reverse Voltage: 5V Forward Current: 1mA Optical Source Power Range: 0.1u~100m W/cm2 Soldering Temperature: 260'C 4. Characteristics (at 25'C) Dark Current: 1nA Temperature Coefficient: 0.08%/'C Responsivity: 0.14A/W Spectral Detection Range: 240~370ã?? Active area: 0.076mm2
As per PN and Model Standard lot size
Sensor The dis include: current sensor, voltage sensor, photo gate sensor, light level sensor, force sensor, micro current sensor, motion sensor, temperature sensor, gas pressure sensor, sound sensor, 1394 interface data line, usb date line and dislab software.
Power (W): 15; Power factor: 0,5; Voltage/Frequency (V/Hz): 220/50; CCT (K): 3000K/6500; Luminous efficacy (lm/W): 60/63; CRI (Ra): 80; Life span (hrs): 25.000; IP54; Flicker-free; CE, KC certified, can apply for other standards as requirements; Warranty: 2 years; OEM accepted;
1. Uv sensor guvb-t11gd-l features Aluminium gallium nitride based material Schottky-type photodiode Photovoltaic mode operation Good visible blindness High responsivity & low dark current 2. Uv sensor guvb-t11gd-l applications Uv-b lamp monitoring Uv-b led monitoring 3. Uv sensor guvb-t11gd-l absolute maximum ratings Storage temperature: -40~90'c Operating temperature: -30~85'c Reverse voltage: 3v Forward current: 1ma Optical source power range: 0.01âµ~100m w/cm2 Soldering temperature: 260'c 4. Uv sensor guvb-t11gd-l characteristics (at 25'c) Dark current(max.): 20na Photo current(typ.): 1.5 Temperature coefficient: 0.1%/'c Responsivity: 0.13a/w Spectral detection range: 220~320nm Active area: 1.536mm2
Concentrator lens sic based uv photodiode sensor sg01d-5lens Avirtual = 11, 0 mm2 Properties of the sg01d–5lens uv photodiode • broadband uva+uvb+uvc, ptb reported high chip stability, for flame detection • radiation sensitive area a = 11, 0 mm2 • to5 hermetically sealed metal housing with concentrator lens, 1 isolated pin and 1 case pin • 10µw/cm2 peak radiation results a current of approx. 350 na About the material silicon carbide (sic) Sic provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make sic the best available material for visible blind semiconductor uv detectors. The sic detectors can be permanently operated at up to 170°c (338°f). The temperature coefficient of signal responsivity) is also low, < 0, 1%/k. Because of the low noise (dark current in the fa range), very low uv radiation intensities can be measured reliably. Please note that this device needs an appropriate amplifier (see typical circuit on page 3). Options Sic photodiodes are available with seven different active chip areas from 0, 06 mm2 up to 36 mm2. Standard versionis broadband uva-uvb-uvc. Four filtered versions lead to a tighter sensitivity range. All photodiodes have a hermetically sealed metal housing (to type), either a 5, 5 mm diameter to18 housing or a 9, 2 mm to5 housing. Further option is either a 2 pin header (1 isolated, 1 grounded) or a 3 pin header (2 isolated, 1 grounded).
