Description RD30HVF1 is a mos fet type transistor specifically Designed for vhf rf power amplifiers applications. Features High power gain: Pout>30W, GP>14.7DB @VDD=12.5V, F=175MHZ High efficiency: 60%typ. Application For output stage of high power amplifiers in vhf band Mobile radio sets. Rohs compliant Rd30hvf1-101 is a rohs compliant products. Rohs compliance is indicate by the letter after The lot marking. Tray.
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Services: Installation
